Electroluminescence and photovoltaic detection in Cd-implanted CuInSe2 <i>p</i>-<i>n</i> junction diodes

Abstract

p-n junction diodes have been prepared by the ion implantation of Cd into p-type CuInSe2. Electroluminescence is observed near 1.3 μ with internal quantum efficiency of 15% at 77 °K and ∼0.1% at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70% in the wavelength region 0.7–1.1 μ.