Applied Physics Letters · 1975 · 47 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingOptical Properties Of SemiconductorsP-n JunctionsPhotovoltaic DevicesSemiconductor Device MaterialsSolar CellsDetective Quantum EfficiencyElectroluminescenceInternal Quantum EfficiencyIon Implantation EffectsP-n Junction Solar CellsPhotoluminescencePhotovoltaic EfficiencyQuantum Efficiency
p-n junction diodes have been prepared by the ion implantation of Cd into p-type CuInSe2. Electroluminescence is observed near 1.3 μ with internal quantum efficiency of 15% at 77 °K and ∼0.1% at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70% in the wavelength region 0.7–1.1 μ.
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CuInSe2/CdS heterojunction photovoltaic detectors
S. Wagner, J. L. Shay, P. Migliorato et al. · Applied Physics Letters · 1974 · 403 citations
Junction electroluminescence in CuInSe2
P. Migliorato, B. Tell, J. L. Shay et al. · Applied Physics Letters · 1974 · 55 citations