Jyi-Tsong Lin

Atomic-scale evolution of modulated phases at the ferroelectric–antiferroelectric morphotropic phase boundary controlled by flexoelectric interaction

Albina Y. Borisevich, Eugene А. Eliseev, Anna N. Morozovska et al. · Nature Communications · 2012 · 169 citations · Full text

Materials Science, Flexoelectric Interaction, Multiferroics +9

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

Jyi-Tsong Lin, Arunanshu M. Roy, Aneesh Nainani et al. · Applied Physics Letters · 2011 · 121 citations

Engineering, Semiconductor Device, Semiconductors +21

Specific Contact Resistivity of Tunnel Barrier Contacts Used for Fermi Level Depinning

Arunanshu M. Roy, Jyi-Tsong Lin, Krishna C. Saraswat · IEEE Electron Device Letters · 2010 · 92 citations

Engineering, Semiconductor Device, Fermi Level Pinning +18

Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer

Jyi-Tsong Lin, Arunanshu M. Roy, Krishna C. Saraswat · IEEE Electron Device Letters · 2012 · 56 citations

Contact Resistance Reduction, Engineering, Semiconductors +16

Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method

Shashank Gupta, Benjamin Vincent, Bin Yang et al. · 2012 · 38 citations

Electrical Engineering, Electronic Devices, Engineering +11