Sang Hee Ko Park

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

Jun Yong Bak, Min‐Ki Ryu, Sang Hee Ko Park et al. · IEEE Transactions on Electron Devices · 2014 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Jun Yong Bak, Min‐Ki Ryu, Sang Hee Ko Park et al. · IEEE Electron Device Letters · 2014 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

Jun Yong Bak, Sinhyuk Yang, Min Ki Ryu et al. · ACS Applied Materials & Interfaces · 2012 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

Jun Yong Bak, Shinhyuk Yang, Hojun Ryu et al. · IEEE Transactions on Electron Devices · 2014 · 18 citations

Engineering, Electrical Engineering, Physics +17