Jun Yong Bak

Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

Shinhyuk Yang, Jun Yong Bak, Sung‐Min Yoon et al. · IEEE Electron Device Letters · 2011 · 63 citations

Engineering, Electrical Engineering, Materials Science +15

Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Jun Yong Bak, Youngho Kang, Shinhyuk Yang et al. · Scientific Reports · 2015 · 37 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

Jun Yong Bak, Min‐Ki Ryu, Sang Hee Ko Park et al. · IEEE Transactions on Electron Devices · 2014 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

Jun Yong Bak, Min‐Ki Ryu, Sang Hee Ko Park et al. · IEEE Electron Device Letters · 2014 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications

Jun Yong Bak, Shinhyuk Yang, Sung Min Yoon · Ceramics International · 2012 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +16