Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Shoji Ikeda, Jun Hayakawa, Yoshito Ashizawa, +6

Applied Physics Letters

Magnetic PropertiesEngineeringMagnetic ResonanceTunnel MagnetoresistanceSpintronic Material +18

Magnetic Tunnel Junctions for Spintronic Memories and Beyond

Shoji Ikeda, Jun Hayakawa, Young Min Lee, +4

IEEE Transactions on Electron Devices

Magnetic PropertiesEngineeringLow-dimensional MagnetismMagnetic ResonanceTunnel Magnetoresistance +21

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, +5

Applied Physics Express

Non-volatile MemoryEngineeringVlsi DesignNonvolatile Memory ElementsEmerging Memory Technology +16

Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature

Jun Hayakawa, Shoji Ikeda, F. Matsukura, +2

Japanese Journal of Applied Physics

Magnetic PropertiesEngineeringMgo ThicknessGiant Tunnel MagnetoresistanceMagnetic Materials +17

2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

T. Kawahara, R. Takemura, K. Miura, +11

IEEE Journal of Solid-State Circuits

SpintronicsElectrical EngineeringArray SchemeUniversal MemoryEngineering +13

2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

T. Kawahara, R. Takemura, K. Miura, +11

Non-volatile MemoryArray SchemeEngineeringParallelizing-direction Current ReadEmerging Memory Technology +16

Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee, +5

Japanese Journal of Applied Physics

Magnetic PropertiesEngineeringTunnel MagnetoresistanceSpintronic MaterialCurrent-driven Magnetization +15

Development of half-metallic ultrathin Fe3O4 films for spin-transport devices

Susumu Soeya, Jun Hayakawa, Hiromasa Takahashi, +5

Applied Physics Letters

Magnetic PropertiesPrepared Fe3o4 FilmEngineeringMagnetic ResonanceThin Film Process Technology +18

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, Shoji Ikeda, J. H. Park, +7

Applied Physics Letters

Magnetic PropertiesEngineeringTmr RatioTunnel MagnetoresistanceMagnetic Materials +14

Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

Jun Hayakawa, Shoji Ikeda, Young Min Lee, +5

Japanese Journal of Applied Physics