B. M. McGregor

Frequency dependence of the dielectric properties of La-doped Pb(Zr0.35Ti0.65)O3 thin films

Z. G. Zhang, Daping Chu, B. M. McGregor et al. · Applied Physics Letters · 2003 · 21 citations

Natural Sciences, Materials Science, Physics +17

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

J. M. Bonar, A. F. W. Willoughby, Aihua Dan et al. · Journal of Materials Science Materials in Electronics · 2001 · 20 citations

Natural Sciences, Materials Science, Physics +14

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

T. J. Grasby, C. P. Parry, P. J. Phillips et al. · Applied Physics Letters · 1999 · 19 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

R.J.P. Lander, C. J. Emeleus, B. M. McGregor et al. · Journal of Applied Physics · 1997 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Daping Chu, Z. G. Zhang, P. Migliorato et al. · Applied Physics Letters · 2002 · 12 citations

Natural Sciences, Materials Science, Physics +17