P. J. Phillips

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Michael J. Palmer, G. Braithwaite, T. J. Grasby et al. · Applied Physics Letters · 2001 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas

T. E. Whall, N. L. Mattey, Andrew Plews et al. · Applied Physics Letters · 1994 · 35 citations

Natural Sciences, Materials Science, Physics +16

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Andrew P. Knights, R. Gwilliam, B.J. Sealy et al. · Journal of Applied Physics · 2001 · 34 citations

Natural Sciences, Materials Science, Physics +17

On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

R.J.P. Lander, M.J. Kearney, A I Horrell et al. · Semiconductor Science and Technology · 1997 · 32 citations

Engineering, Materials Science, Physics +17

The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers

R. Hammond, P. J. Phillips, T. E. Whall et al. · Applied Physics Letters · 1997 · 24 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15