N. A. Valisheva - Concepedia

Author

N. A. Valisheva

Also Known As

N A Valisheva, N Valisheva, N. A. VALISHEVA, N. A. Valisheva, N. Valisheva, N.A. Valisheva, N. A. Valisheva, Natalya A. Valisheva, Natalya А. Valisheva, Н.А. Валишева

Publications

277

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Novosibirsk State University Boreskov Institute of Catalysis Russian Academy of Sciences

About

N. A. Valisheva is an author at Institute of Semiconductor Physics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	135
2	Applied Physics	7	7	124
3	Materials Science	6	6	102
4	Chemistry	3	3	35
5	Electrical Engineering	3	3	44

N. A. Valisheva

Publications

176

Citations

H-Index

Page 1

	Year	Citations
Phase composition of thin oxide films on InSb T. P. Smirnova, A. N. Golubenko, N.F. Zacharchuk, Thin Solid Films Materials ScienceEngineeringOxide ElectronicsApplied PhysicsCondensed Matter Physics	1981	36
Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev, Materials Science in Semiconductor Processing Materials ScienceSurface CharacterizationMaterial AnalysisEngineeringSurface Science	2017	20
InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge M. S. Aksenov, A. Yu. Kokhanovskii, Petr Polovodov, Applied Physics Letters Electrical EngineeringElectronic DevicesEngineeringPlasma ElectronicsOxide Electronics	2015	19
Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures G. L. Kuryshev, A. P. Kovchavtsev, N. A. Valisheva Semiconductors	2001	18
The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors A. P. Kovchavtsev, A. V. Tsarenko, A. A. Guzev, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsNanoelectronicsOxide Electronics	2015	14
High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines A. Chizh, K. Mikitchuk, A. I. Toropov, Technical Physics Letters	2019	13
Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation N. A. Valisheva, M. S. Aksenov, V. A. Golyashov, Applied Physics Letters EngineeringElectrode-electrolyte InterfaceLow DensityChemistryMos Capacitors	2014	12
Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine N. A. Valisheva, M. S. Aksenov, S. E. Khandarkhaeva, The Journal of Physical Chemistry C Materials ScienceFluorine/oxygen Ratio InfluenceSurface CharacterizationEngineeringSurface Chemistry	2017	12
Composition and morphology of fluorinated anodic oxides on InAs (111)A surface N. A. Valisheva, Igor P. Prosvirin, T. A. Levtsova, Applied Surface Science Materials ScienceSurface CharacterizationEngineeringSurface ChemistryFluorinated Anodic Oxides	2010	11
InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy N. A. Valisheva, A. M. Gilinsky, A. I. Toropov IOP Conference Series Materials Science and Engineering Materials SciencePhotonicsElectrical EngineeringEpitaxial GrowthEngineering	2019	11

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