N. A. Valisheva

Phase composition of thin oxide films on InSb

T. P. Smirnova, A. N. Golubenko, N.F. Zacharchuk et al. · Thin Solid Films · 1981 · 36 citations

Materials Science, Engineering, Oxide Electronics +5

Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts

M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev et al. · Materials Science in Semiconductor Processing · 2017 · 20 citations

Materials Science, Surface Characterization, Material Analysis +5

InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

M. S. Aksenov, A. Yu. Kokhanovskii, Petr Polovodov et al. · Applied Physics Letters · 2015 · 19 citations

Electrical Engineering, Electronic Devices, Engineering +10

Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures

G. L. Kuryshev, A. P. Kovchavtsev, N. A. Valisheva · Semiconductors · 2001 · 18 citations

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

A. P. Kovchavtsev, A. V. Tsarenko, A. A. Guzev et al. · Journal of Applied Physics · 2015 · 14 citations

Electrical Engineering, Engineering, Physics +12