Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures

Abstract

Special features of electronic processes in InAs-based MIS structures operating in the charge injection mode were investigated. These structures are used as photodetectors in the spectral range of 2.5–3.05 µm. A double-layer system consisting of an anodic oxide layer and a low-temperature silicon dioxide layer was used as an insulator. It was shown that fluorine-containing components, which were introduced into electrolyte, reduced the value of the built-in charge and the surface-state density to minimal measurable values of ≲2×1010 cm−2 eV−1. Physical and chemical characteristics of the surface states at the InAs-insulator interface and the possible causes of their absence were discussed on the basis of the phase composition data of anodic oxide obtained by X-ray photoelectron spectroscopy. An anomalous field generation was observed under the nonequilibrium depletion of the semiconductor. The processes of tunneling generation, which are important at large amplitudes of the depletion pulse, were considered. The noise behavior of MIS structures under a nonequilibrium depletion was investigated.