Concepedia

M. S. Aksenov

MS

8

Publications

111

Citations

8

H-Index

2014

Active since

Affiliations

Institute of Semiconductor Physics(Current)

Novosibirsk State University

Boreskov Institute of Catalysis

Institute of Strength Physics and Materials Science

National Research Tomsk State University

M. S. Aksenov is an author at Institute of Semiconductor Physics specializing in engineering, applied physics, and surface science.

Top concepts

EngineeringApplied PhysicsSurface ScienceChemistryMaterial ScienceElectrochemistrySurface ChemistryElectronic DevicesElectronic StructureElectrical Engineering

Publications per year

2014–2019

8

Publications

8

Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts

M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev et al. · Materials Science in Semiconductor Processing · 2017 · 20 citations

Materials Science, Surface Characterization, Material Analysis +5

InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

M. S. Aksenov, A. Yu. Kokhanovskii, Petr Polovodov et al. · Applied Physics Letters · 2015 · 19 citations

Electrical Engineering, Electronic Devices, Engineering +10

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

A. P. Kovchavtsev, A. V. Tsarenko, A. A. Guzev et al. · Journal of Applied Physics · 2015 · 14 citations

Electrical Engineering, Engineering, Physics +12

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

A. Chizh, K. Mikitchuk, A. I. Toropov et al. · Technical Physics Letters · 2019 · 13 citations

Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

N. A. Valisheva, M. S. Aksenov, V. A. Golyashov et al. · Applied Physics Letters · 2014 · 12 citations

Engineering, Electrode-electrolyte Interface, Low Density +19

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