H. Sayama - Concepedia

Author

H. Sayama

Mitsubishi Electric (Japan)

Also Known As

H. Sayama, Hirokazu SAYAMA, Hirokazu Sayama, Hirokazu Sayama Hirokazu Sayama

Publications

367

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)The University of Osaka Mitsubishi Group (Japan)Mitsubishi Electric (Germany)

About

H. Sayama is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	239
2	Applied Physics	7	7	186
3	Natural Sciences	1	1	18
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	11

H. Sayama

Publications

266

Citations

H-Index

Page 1

	Year	Citations
Novel locally strained channel technique for high performance 55nm CMOS K. Ota, Kenya Sugihara, H. Sayama, Low-power ElectronicsElectrical EngineeringChannel TechniqueEngineeringVlsi Design	2003	93
Effect of &gt;100&lt; channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length H. Sayama, Y. Nishida, H. Oda, Low-power ElectronicsElectrical EngineeringCurrent DrivabilityEngineeringHigh Performance Sce	2003	24
Novel SOI wafer engineering using low stress and high mobility CMOSFET with &gt;100&lt;-channel for embedded RF/analog applications Takeru Matsumoto, S. Maeda, Hung Dang, Low-power ElectronicsElectrical EngineeringEngineeringRf SemiconductorAdvanced Packaging (Semiconductors)	2003	23
Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes M. Takai, T. Kishimoto, Yutaka Ohno, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringMolecular BiologyConventional WellPhase Change Memory	1996	18
Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation H. Sayama, Hiroshi Kimura, Yoshikazu Ohno, Japanese Journal of Applied Physics Soft Error ReductionElectrical EngineeringIon ImplantationEngineeringNuclear Physics	1993	17
Deep levels induced by high-energy boron ion implantation into <i>p</i>-silicon H. Sayama, M. Takai, Yoshihiko Yuba, Applied Physics Letters	1992	17
70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications Takeru Matsumoto, Shoji Maeda, Kosuke Ota, Ghz F/sub Max/World Record DataElectrical EngineeringLogic ApplicationsEngineering	2002	15
New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe H. Sayama, S. Hara, Hiroshi Kimura, Japanese Journal of Applied Physics Hardware SecurityNon-volatile MemoryEngineeringComputer ArchitectureComputer Engineering	1992	14
Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation H. Sayama, Mikio Takai, Youichi Akasaka, Japanese Journal of Applied Physics EngineeringElectrical EvaluationIntegrated CircuitsSilicon On InsulatorSemiconductor Device	1989	14
Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N[sub 2]O-Grown Oxynitride Akinobu Teramoto, Hiroshi Umeda, Hideo Tamura, Journal of The Electrochemical Society EngineeringNitrogen ProfilesChemistrySemiconductorsChemical Engineering	2000	11

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