Y. Nishida

Effect of >100< channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length

H. Sayama, Y. Nishida, H. Oda et al. · 2003 · 24 citations

Low-power Electronics, Electrical Engineering, Current Drivability +11

Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

Yoshihiro Miyagawa, Tatsunori Murata, Y. Nishida et al. · Japanese Journal of Applied Physics · 2007 · 19 citations

Engineering, Tensile Stress, Vacuum Device +25

Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-k/Metal Gate Transistor

Tatsunori Murata, Yoshihiro Miyagawa, Y. Nishida et al. · Japanese Journal of Applied Physics · 2010 · 12 citations

Engineering, Offset Spacer, Offset Spacer Films +20

Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N[sub 2]O-Grown Oxynitride

Akinobu Teramoto, Hiroshi Umeda, Hideo Tamura et al. · Journal of The Electrochemical Society · 2000 · 11 citations

Engineering, Nitrogen Profiles, Chemistry +17

W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

T. Yamashita, Y. Nishida, Kiyoshi Hayashi et al. · Japanese Journal of Applied Physics · 2004 · 10 citations

Materials Science, Materials Engineering, Electrical Engineering +13