Yi-Wei Lian

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

Chuan‐Wei Tsou, Kai-Pin Wei, Yi-Wei Lian et al. · IEEE Electron Device Letters · 2015 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +11

AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

Yi-Wei Lian, Yu‐Syuan Lin, Jui‐Ming Yang et al. · IEEE Electron Device Letters · 2013 · 83 citations

Semiconductors, Selective Si Diffusion, Electrical Engineering +15

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

Yi-Wei Lian, Yu‐Syuan Lin, Hou-Cheng Lu et al. · IEEE Electron Device Letters · 2012 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Chuan‐Wei Tsou, Chen-Yi Lin, Yi-Wei Lian et al. · IEEE Transactions on Electron Devices · 2015 · 52 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

Yi-Wei Lian, Yu‐Syuan Lin, Hou-Cheng Lu et al. · IEEE Transactions on Electron Devices · 2015 · 30 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10