Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

Concepts

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsDrain E-field ManipulationPower Semiconductor DeviceAluminum Gallium NitrideHybrid Drain DesignGan Power DevicePower ElectronicsCategoryiii-v SemiconductorOnset VoltageExtended Schottky Electrodes

Abstract

The proposed hybrid Schottky-ohmic drain structure is analyzed in detail for AlGaN/GaN power high-electron mobility transistors on the Si substrate. Without any additional photomasks and process steps, the hybrid drain design can alter the electric field distribution to improve the breakdown voltage V BK . In addition, it provides an additional current path to achieve zero onset voltage and reduce the ON-resistance. It was found that the Schottky extension L ext is critical to V BK , R ON , and also the current collapse phenomena of the transistors. The extended Schottky electrodes for optimized transistor characteristics are investigated, and the physics behind are discussed. With an L ext ~ 2-3 μm, V BK can be improved up to 60% with an R ON degradation below 3%.

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