2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

Abstract

In this letter, we demonstrate high-performance AlGaN/GaN Schottky barrier diodes (SBDs) on Si substrate with a recessed-anode structure for reduced turn-on voltage VON. The impact of the surface roughness after the recessed-anode formation on device characteristics is investigated. An improved surface condition can reduce the leakage current and enhance the breakdown voltage simultaneously. A low turn-on voltage of only 0.73 V can be obtained with a 50-nm recess depth. In addition, the different lengths of Schottky extension acting like a field plate are investigated. A high reverse breakdown voltage of 2070 V and a low specific ON-resistance of 3.8 mΩ · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> yield an excellent Baliga's figure of merit of 1127 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which can be attributed to the low surface roughness of only 0.6 nm and also a proper Schottky extension of 2 μm to alleviate the peak electric field intensity in the SBDs.