Kouichi Muraoka

Reaction steps of silicidation in ZrO2/SiO2/Si layered structure

Kouichi Muraoka · Applied Physics Letters · 2002 · 49 citations

Materials Engineering, Materials Science, Molecular Sieve +14

Investigation of Nitrogen-Originated NBTI Mechanism in SiON with High-Nitrogen Concentration

Kiwamu Sakuma, Daisuke Matsushita, Kouichi Muraoka et al. · 2006 · 45 citations

Materials Engineering, Materials Science, Nitrogen Concentration +15

A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices

Nobuaki Yasutake, K. Ohuchi, M. Fujiwara et al. · 2004 · 36 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Optimum structure of deposited ultrathin silicon oxynitride film to minimize leakage current

Kouichi Muraoka, Kazuaki Kurihara, Naoki Yasuda et al. · Journal of Applied Physics · 2003 · 29 citations

Engineering, Direct Tunneling, Optimum Structure +16

Determination of tunnel mass and physical thickness of gate oxide including poly-Si/SiO/sub 2/ and Si/SiO/sub 2/ interfacial transition Layers

Hiroshi Watanabe, Daisuke Matsushita, Kouichi Muraoka · IEEE Transactions on Electron Devices · 2006 · 27 citations

Engineering, Negative Polarity, Silicon On Insulator +16