Gaddi S. Haase - Concepedia

Author

Gaddi S. Haase

Texas Instruments (United States)

Also Known As

G Haase, G. Haase, G. S. Haase, G.S. Haase, Gaddi Haase, Gaddi S. Haase

Publications

357

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Sandia National Laboratories Pennsylvania State University

About

Gaddi S. Haase is an author at Texas Instruments (United States) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	296
2	Electrical Engineering	7	7	296
3	Applied Physics	6	6	257
4	Medicine	1	1	13
5	Computer Engineering	1	1	39

Gaddi S. Haase

Publications

296

Citations

H-Index

Page 1

	Year	Citations
Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics E.T. Ogawa, Jin‐Young Kim, Gaddi S. Haase, EngineeringSilicon On InsulatorFailure KineticsInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)	2003	115
Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits Gaddi S. Haase, Ennis T. Ogawa, J. W. McPherson Journal of Applied Physics EngineeringIntegrated CircuitsInterconnect (Integrated Circuits)Reliability EngineeringElectronic Devices	2005	57
A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuits Gaddi S. Haase Journal of Applied Physics EngineeringLow-k DielectricMicroelectronic Integrated CircuitsIntegrated CircuitsElectric Degradation	2009	46
Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown Gaddi S. Haase, J. W. McPherson EngineeringInterconnect Dielectric LifetimeLow-k DielectricInterconnect (Integrated Circuits)Electromagnetic Compatibility	2007	39
An alternativemodel for interconnect low-k dielectric lifetime dependence on voltage Gaddi S. Haase Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentBias Temperature Instability	2008	13
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors Stephen J. Moxim, Fedor V. Sharov, David Russell Hughart, Applied Physics Letters Si/sio2 TransistorsEngineeringMagnetic ResonanceSilicon On InsulatorDefect Tolerance	2022	13
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance Fedor V. Sharov, Stephen J. Moxim, Gaddi S. Haase, IEEE Transactions on Nuclear Science Defect ToleranceElectrical EngineeringEngineeringNuclear PhysicsPhysics	2022	13

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