Huaqiang Wu

Improving Analog Switching in HfO_{<italic>x</italic>}-Based Resistive Memory With a Thermal Enhanced Layer

Wei Wu, Huaqiang Wu, Bin Gao et al. · IEEE Electron Device Letters · 2017 · 278 citations

Engineering, Electrical Engineering, Materials Science +15

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih et al. · Nanoscale Research Letters · 2017 · 75 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Optimization of RRAM-Based Physical Unclonable Function With a Novel Differential Read-Out Method

Yachuan Pang, Huaqiang Wu, Bin Gao et al. · IEEE Electron Device Letters · 2017 · 58 citations

Engineering, Computer Engineering, Electrical Engineering +17

Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory

Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang et al. · ACS Applied Materials & Interfaces · 2017 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

Xinyi Li, Huaqiang Wu, Bin Gao et al. · IEEE Electron Device Letters · 2016 · 28 citations

Engineering, Electrical Engineering, Materials Science +12