Kurt V. Smith

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

A.F.M. Anwar, R.T. Webster, Kurt V. Smith · Applied Physics Letters · 2006 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

T. Kikkawa, Tsutomu Hosoda, Kenji Imanishi et al. · 2014 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Commercialization and reliability of 600 V GaN power switches

T. Kikkawa, Tsutomu Hosoda, K. Shono et al. · 2015 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures

Kurt V. Smith, Edward T. Yu, Joan M. Redwing et al. · Applied Physics Letters · 1999 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

(Invited)<i/>650 Volt GaN Commercialization Reaches Automotive Standards

P. Parikh, Kurt V. Smith, R. Barr et al. · ECS Transactions · 2017 · 23 citations

Engineering, Automotive Engineering, Electrical Engineering +17