A.F.M. Anwar - Concepedia

Author

A.F.M. Anwar

Also Known As

A F M Anwar, A. F. M. ANWAR, A. F. M. Anwar, A. F. Mehdi Anwar, A.F. Mehdi Anwar, A.F.M Anwar, A.F.M. Anwar, Anmol Anwar

116

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of Connecticut Clarkson University United States Air Force Research Laboratory Rochester Institute of Technology Sensors (United States)

About

A.F.M. Anwar is an author at University of Connecticut specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	29	948
2	Applied Physics	17	29	956
3	Electrical Engineering	17	28	867
4	Natural Sciences	1	1	11
5	Computer Engineering	1	1	11

A.F.M. Anwar

Publications

Citations

H-Index

Page 1

	Year	Citations
Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept A. N. Khondker, M. Rezwan Khan, A.F.M. Anwar Journal of Applied Physics Quantum ScienceElectrical EngineeringEngineeringQuantum ComputingPhysics	1988	152
Calculation of the traversal time in resonant tunneling devices A.F.M. Anwar, A. N. Khondker, M. Rezwan Khan Journal of Applied Physics Device ModelingQuantum ScienceEngineeringTransmission Line TechniquesPhysics	1989	88
Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors A.F.M. Anwar, Shangli Wu, R.T. Webster IEEE Transactions on Electron Devices SemiconductorsAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorElectron Saturation Velocity	2001	88
Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications A.F.M. Anwar, R.T. Webster, Kurt V. Smith Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringGate Bias DependenceNanoelectronics	2006	79
Impact ionization in InAlAs/InGaAs/InAlAs HEMT's R.T. Webster, Shangli Wu, A.F.M. Anwar IEEE Electron Device Letters Excess GateElectrical EngineeringEngineeringPhysicsElectronic Engineering	2000	59
High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films Lhacene Adnane, Adam Cywar, Kadir Cil, Journal of Applied Physics Ge2sb2te5 Thin FilmsEngineeringThermoelectricsThin Film Process TechnologyPhase Change Memory	2017	40
AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics Elias W. Faraclas, A.F.M. Anwar Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2006	38
A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series A. Ahmed, A.F.M. Anwar IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringVolterra SeriesEngineeringRf Semiconductor	2001	38
Self-Heating and Trapping Effects on the RF Performance of GaN MESFETs S.S. Islam, A.F.M. Anwar IEEE Transactions on Microwave Theory and Techniques Trapping EffectsWide-bandgap SemiconductorElectrical EngineeringRf Power PerformancesEngineering	2004	37
Temperature-dependent nonlinearities in GaN/AlGaN HEMTs S.S. Islam, A.F.M. Anwar IEEE Transactions on Electron Devices Wide-bandgap SemiconductorTemperature-dependent NonlinearitiesElectrical EngineeringEngineeringRf Semiconductor	2002	32

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