Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors

Abstract

Ensemble Monte Carlo simulation is used to determine the electron saturation velocity and low-field mobility for Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Acoustic phonon, optical phonon, intervalley, ionized impurity, alloy, and piezoelectric scattering are included in the simulation. Doping concentration ranging from 10/sup 17/ cm/sup -3/ to 10/sup 19/ cm/sup -3/ is considered in the temperature range from 50 K to 500 K, Theoretical calculation shows excellent agreement with low-field mobility experimental data. Empirical expressions for low field mobility and saturation velocity are provided as functions of temperature, doping concentration and mole fraction.