F. Andrieu

UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

M. K. Md Arshad, S. Makovejev, Sarah H. Olsen et al. · Solid-State Electronics · 2013 · 55 citations

Engineering, Electrical Engineering, Microelectronics +13

Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

M. K. Md Arshad, Valeriya Kilchytska, M. Emam et al. · Solid-State Electronics · 2014 · 36 citations

Engineering, Electrical Engineering, Microelectronics +11

Engineered substrates for future More Moore and More than Moore integrated devices

L. Clavelier, C. Deguet, L. Di Cioccio et al. · 2010 · 28 citations

Engineering, Materials Engineering, Materials Science +17

Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET

A. Villalon, C. Le Royer, M. Cassé et al. · IEEE Transactions on Electron Devices · 2013 · 22 citations

Engineering, Electrical Engineering, Materials Science +15

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: $V_{\rm th}$ Tuning, Variability, Access Resistance, and Mobility Issues

A. Villalon, C. Le Royer, S. Cristoloveanu et al. · IEEE Transactions on Electron Devices · 2013 · 19 citations

Engineering, Electrical Engineering, Materials Science +17