Y. K. Park is an author at Samsung (South Korea) specializing in ferroelectric random-access memory, magnetoresistive random-access memory, and resistive random-access memory.
Top concepts
EngineeringMemory DevicesComputer MemoryMicroelectronicsEnergy EfficiencyMemory ReliabilityComputer EngineeringComputer ArchitectureElectrical EngineeringResistive Random-access Memory
Publications per year
2014–2022
2
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1–2 of 2