Jheng-Yi Jiang

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Der-Sheng Chao, Hua-Yu Shih, Jheng-Yi Jiang et al. · Japanese Journal of Applied Physics · 2019 · 27 citations

Electrical Engineering, Engineering, Displacement Damage +14

1100 V, 22.9 mΩcm² 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation

Jia-Wei Hu, Jheng-Yi Jiang, Wei‐Chen Chen et al. · IEEE Transactions on Electron Devices · 2021 · 18 citations

Device Modeling, 4H-silicon Carbide, Electrical Engineering +11

Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

Jheng-Yi Jiang, Jia-Ching Hung, Kang-Min Lo et al. · IEEE Electron Device Letters · 2020 · 16 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Jheng-Yi Jiang, Hua-Chih Hsu, Kuan-Wei Chu et al. · IEEE Electron Device Letters · 2015 · 12 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Radiation Influence Comparison between SiC JMOS and DMOS

Fu-Jen Hsu, Chien‐Ching Hung, Kuo-Ting Chu et al. · 2020 · 10 citations