Fu-Jen Hsu

High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

Fu-Jen Hsu, Cheng-Tyng Yen, Chien‐Ching Hung et al. · 2017 · 69 citations

Sic Mosfet, Junction Barrier, Electrical Engineering +12

Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Cheng-Tyng Yen, Chien‐Ching Hung, Hsiang-Ting Hung et al. · Applied Physics Letters · 2016 · 39 citations

Sic Mosfet, Electrical Engineering, Semiconductor Device +12

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Der-Sheng Chao, Hua-Yu Shih, Jheng-Yi Jiang et al. · Japanese Journal of Applied Physics · 2019 · 27 citations

Electrical Engineering, Engineering, Displacement Damage +14

Oxide Breakdown Reliability of SiC MOSFET

Cheng-Tyng Yen, H.Y. Lee, Chin‐Chun Hung et al. · 2019 · 22 citations

Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier

Cheng-Tyng Yen, Fu-Jen Hsu, Chien‐Ching Hung et al. · 2018 · 20 citations

Sic Mosfet, Semiconductor Technology, Electrical Engineering +13