Teruhiko Kamei

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat et al. · IEEE Journal of Solid-State Circuits · 2009 · 76 citations

Engineering, Computer Engineering, Computer Science +14

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · IEEE Journal of Solid-State Circuits · 2009 · 53 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 47 citations · Full text

Engineering, Computer Engineering, Computer Science +15

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Engineering, Computer Engineering, Computer Science +14