K. Rochereau

Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

Augustin Cathignol, B. Cheng, D. Chanemougame et al. · IEEE Electron Device Letters · 2008 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs

Asen Asenov, Augustin Cathignol, B. Cheng et al. · IEEE Electron Device Letters · 2008 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

Jonathan S. Steckel, E. Josse, Andras G. Pattantyus‐Abraham et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

A Cost-Effective Low Power Platform for the 45-nm Technology Node

E. Josse, S. Parihar, Olivier Callen et al. · 2006 · 33 citations

Engineering, Computer Engineering, Electrical Engineering +11

Low cost 65nm CMOS platform for Low Power & General Purpose applications

F. Arnaud, B. Duriez, B. Tavel et al. · 2004 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +15