K. Horino

Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

Shigefusa F. Chichibu, A. Shikanai, T. Azuhata et al. · Applied Physics Letters · 1996 · 121 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14

Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN

K. Domen, K. Horino, Akito Kuramata et al. · Applied Physics Letters · 1997 · 73 citations

Wide-bandgap Semiconductor, Photoluminescence, Engineering +12

Optical gain for wurtzite GaN with anisotropic strain in c plane

K. Domen, K. Horino, Akito Kuramata et al. · Applied Physics Letters · 1997 · 51 citations

Materials Science, Tensile Strain, Wide-bandgap Semiconductor +14

Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN multiquantum well lasers

K. Domen, Reiko Soejima, Akito Kuramata et al. · Applied Physics Letters · 1998 · 37 citations

Photonics, Electrical Engineering, Interwell Inhomogeneity +12

A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

T. Kikkawa, Miyuki Nagahara, T. Kimura et al. · 2003 · 23 citations

Electrical Engineering, Engineering, Gan Cap Layer +11