Seiya Masuda

Reduction of the Outgassing Segments and LWR Improvement for the Next Generation EUV Lithography

Seiya Masuda, Shinji Tarutani, Sou Kamimura et al. · Journal of Photopolymer Science and Technology · 2007 · 19 citations · Full text

Electrical Engineering, Chemical Engineering, Engineering +14

Lithography and line-edge roughness of high-activation-energy resists

Seiya Masuda, Xiaoming Ma, Go Noya et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2000 · 15 citations

Optical Materials, Engineering, Electron-beam Lithography +18

The material design to reduce outgassing in acetal-based chemically amplified resist for EUV lithography

Seiya Masuda, Yasutomo Kawanishi, Shuuji Hirano et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 15 citations

Engineering, Electron-beam Lithography, Euv Lithography +21

Application of photodecomposable base concept to two-component deep-UV chemically amplified resists

Satoru Funato, Norioki Kawasaki, Yoshiaki Kinoshita et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1996 · 14 citations

Engineering, Synthetic Photochemistry, Organic Chemistry +21