J. C. P. Chang

The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

Anthony Lochtefeld, M. R. Melloch, J. C. P. Chang et al. · Applied Physics Letters · 1996 · 109 citations

Semiconductors, Semiconductor Technology, Epitaxial Growth +14

Strain relaxation of compositionally graded In<i>x</i>Ga1−<i>x</i>As buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures

J. C. P. Chang, Jianhui Chen, J. M. Fernández et al. · Applied Physics Letters · 1992 · 92 citations

Materials Science, Oxide Heterostructures, Semiconductors +14

Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems

M. R. Melloch, David D. Nolte, J. M. Woodall et al. · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · 1996 · 64 citations

Materials Science, Semiconductors, Arsenic Antisite +10

Lattice tilt and dislocations in compositionally step-graded buffer layers for mismatched InGaAs/GaAs heterointerfaces

K. L. Kavanagh, J. C. P. Chang, J. Chen et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 49 citations

Semiconductors, Dislocation Densities, Semiconductor Technology +14

Incoherent interface of InAs grown directly on GaP(001)

J. C. P. Chang, T. P. Chin, J. M. Woodall · Applied Physics Letters · 1996 · 44 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Nanostructures +16