H. Puchner

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

Andrea Coronetti, Matteo Cecchetto, Jialei Wang et al. · 2020 · 220 citations · Full text

Non-volatile Memory, Engineering, Vlsi Design +18

Investigation of multi-bit upsets in a 150 nm technology SRAM device

D. Radaelli, H. Puchner, S. Wong et al. · IEEE Transactions on Nuclear Science · 2005 · 178 citations

Engineering, Mem Testing, Computer Architecture +16

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

Nathaniel A. Dodds, M.J. Martinez, P.E. Dodd et al. · IEEE Transactions on Nuclear Science · 2015 · 83 citations · Full text

Engineering, Nuclear Physics, Secondary Protons +18

Multiple Cell Upset Classification<newline/> in Commercial SRAMs

Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio et al. · IEEE Transactions on Nuclear Science · 2014 · 59 citations

Hardware Security, Nm Sram, Electrical Engineering +15

High-Voltage CMOS ESD and the Safe Operating Area

Andrew J. Walker, H. Puchner, Sai Prashanth Dhanraj · IEEE Transactions on Electron Devices · 2009 · 38 citations

Low-power Electronics, Electrical Engineering, Engineering +8