A.D. Batchelor

Trends in residual stress for GaN/AlN/6H–SiC heterostructures

N. V. Edwards, M. D. Bremser, R. F. Davis et al. · Applied Physics Letters · 1998 · 43 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Strain Effects on the Crystal Growth and Superconducting Properties of Epitaxial Niobium Ultrathin Films

C. Clavero, Douglas Beringer, W. M. Roach et al. · Crystal Growth & Design · 2012 · 16 citations

Materials Science, Superconducting Material, Epitaxial Growth +11

TEM and SIMS Analysis of (100), (110), and (111) Single Crystal Niobium

A.D. Batchelor, Donovan N. Leonard, P. E. Russell et al. · AIP conference proceedings · 2007 · 13 citations · Full text

Crystal Structure, Engineering, Sims Analysis +18

Optical characterization of wide bandgap semiconductors

N. V. Edwards, M. D. Bremser, A.D. Batchelor et al. · Thin Solid Films · 2000 · 12 citations

Semiconductors, Wide-bandgap Semiconductor, Optical Materials +9

Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

Thomas Gehrke, K. J. Linthicum, Darren B. Thomson et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 12 citations · Full text