S. Whelan

Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

S. Whelan, Antonino La Magna, V. Privitera et al. · Physical review. B, Condensed matter · 2003 · 67 citations

Engineering, Implant Dose, Laser Ablation +19

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Jaap van den Berg, D.G. Armour, S. Zhang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 55 citations · Full text

Ultrashallow B, Engineering, Silicon On Insulator +17

Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis

G. Fortunato, L. Mariucci, M. Stanizzi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2002 · 39 citations

Advanced Laser Processing, B Implantation, Engineering +8

Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing

S. Whelan, V. Privitera, M. Italia et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 36 citations

Ultralow Energy, Engineering, Laser Applications +20

Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si

Jaap van den Berg, S Zhang, S. Whelan et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 29 citations

Electrical Engineering, Ion Implantation, Engineering +11