M. Italia

Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

S. Whelan, Antonino La Magna, V. Privitera et al. · Physical review. B, Condensed matter · 2003 · 67 citations

Engineering, Materials Engineering, Materials Science +17

High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Corrado Bongiorno, Nicolò Piluso, M. Italia et al. · Thin Solid Films · 2009 · 66 citations

Engineering, Materials Engineering, Materials Science +14

N-type doping of Ge by As implantation and excimer laser annealing

Ruggero Milazzo, E. Napolitani, G. Impellizzeri et al. · Journal of Applied Physics · 2014 · 58 citations

Engineering, Materials Engineering, Materials Science +15

Molecular doping applied to Si nanowires array based solar cells

Rosaria A. Puglisi, C. Garozzo, Corrado Bongiorno et al. · Solar Energy Materials and Solar Cells · 2014 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +14

Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis

G. Fortunato, L. Mariucci, M. Stanizzi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2002 · 41 citations

Engineering, Materials Engineering, Materials Science +14