Linfeng Lan

High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer

Shiben Hu, Kuankuan Lu, Honglong Ning et al. · IEEE Electron Device Letters · 2017 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Linfeng Lan, Ming-Jie Zhao, Nana Xiong et al. · IEEE Electron Device Letters · 2012 · 58 citations

Engineering, Electrical Engineering, Materials Science +13

Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers

Linfeng Lan, Junbiao Peng, Mingliang Sun et al. · Organic Electronics · 2008 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors

Wei Song, Linfeng Lan, Peng Xiao et al. · IEEE Transactions on Electron Devices · 2016 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

InSnZnO Thin-Film Transistors With Vapor- Phase Self-Assembled Monolayer as Passivation Layer

Wei Zhong, Guoyuan Li, Linfeng Lan et al. · IEEE Electron Device Letters · 2018 · 27 citations

Natural Sciences, Electrical Engineering, Materials Science +17