Ming-Jie Zhao

Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Linfeng Lan, Ming-Jie Zhao, Nana Xiong et al. · IEEE Electron Device Letters · 2012 · 58 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +19

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Chia‐Hsun Hsu, Peng Geng, Wan-Yu Wu et al. · Molecules · 2020 · 47 citations · Full text

Aluminium Nitride, Engineering, Thin Film Process Technology +17

Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer

Dongxiang Luo, Hua Xu, Ming-Jie Zhao et al. · ACS Applied Materials & Interfaces · 2015 · 39 citations

Engineering, Indium–gallium–zinc-oxide Thin-film Transistors, Thin Film Process Technology +19

Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions

Ming-Jie Zhao, Zhitao Sun, Zhi-Xuan Zhang et al. · Materials · 2020 · 37 citations · Full text

Effect of working pressure on Sn/In composition and optoelectronic properties of ITO films prepared by high power impulse magnetron sputtering

Ming-Jie Zhao, Jin-Fa Zhang, Qi-Hui Huang et al. · Vacuum · 2021 · 34 citations

Materials Science, Materials Engineering, Electrical Engineering +11