L. Pan

A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications

C.-H. Jan, Uma Bhattacharya, R. Brain et al. · 2012 · 305 citations

Engineering, Computer Engineering, Electrical Engineering +16

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +13

Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires

K.‐K. Lew, L. Pan, Elizabeth C. Dickey et al. · Advanced Materials · 2003 · 110 citations

Natural Sciences, Materials Engineering, Materials Science +15

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

M. Radosavljević, G. Dewey, J. M. Fastenau et al. · 2010 · 93 citations

Engineering, Electrical Engineering, Materials Science +17