M. Suzuki

A 40-ps high electron mobility transistor 4.1 K gate array

Kiyoshi Kajii, Y. Watanabe, M. Suzuki et al. · IEEE Journal of Solid-State Circuits · 1988 · 38 citations

Low-power Electronics, High-electron Mobility Transistor, Electrical Engineering +14

Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs

M. Takikawa, Tatsuya Ohori, Masaru Takechi et al. · Journal of Crystal Growth · 1991 · 36 citations

Electrical Engineering, Engineering, Applied Physics +4

Prospects of SST technology for high speed LSI

T. Sakai, S. Konaka, Yoshiyuki Yamamoto et al. · 1985 · 36 citations

Photonics, Electrical Engineering, Engineering +15

Recent advances in ultrahigh-speed HEMT LSI technology

Masayuki Abe, T. Mimura, Naoki Kobayashi et al. · IEEE Transactions on Electron Devices · 1989 · 35 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +13

Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT's

T. Yokoyama, M. Suzuki, Tsuyoshi Yamamoto et al. · IEEE Electron Device Letters · 1987 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10