Norikazu Nakamura

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 82 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +11

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto et al. · Japanese Journal of Applied Physics · 2019 · 51 citations

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm⁻¹ output power density

Shiro Ozaki, Junya Yaita, Atsushi Yamada et al. · Applied Physics Express · 2021 · 42 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani et al. · Applied Physics Express · 2020 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Discrete Gan Hemts +10

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_<i>x</i> Layer

Junji Kotani, Junya Yaita, Kenji Homma et al. · IEEE Journal of the Electron Devices Society · 2023 · 31 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14