Yueh-Chin Lin

Gate Recessed Quasi-Normally OFF Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Ting-En Hsieh, Edward Yi Chang, Yizuo Song et al. · IEEE Electron Device Letters · 2014 · 109 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin et al. · IEEE Electron Device Letters · 2014 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al₂O₃ on InAs

Hai-Dang Trinh, Edward Yi Chang, Yuen‐Yee Wong et al. · Japanese Journal of Applied Physics · 2010 · 31 citations

Engineering, Chemical Deposition, Surface Technology +18

High-Performance LPCVD-SiN_x/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm² for Power Device Applications

Huan-Chung Wang, Franky Lumbantoruan, Ting-En Hsieh et al. · IEEE Journal of the Electron Devices Society · 2018 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17