G. Radhakrishnan - Concepedia

Author

G. Radhakrishnan

Jet Propulsion Laboratory

Also Known As

G . Radhakrishnan, G Radhakrishnan, G. A. Aswath Radhakrishnan, G. Radhakrishnan, Gouri Radhakrishnan

Publications

373

Citations

H-Index

Concepts

All Affiliations

Jet Propulsion Laboratory Texas State University

About

G. Radhakrishnan is an author at Jet Propulsion Laboratory specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	199
2	Applied Physics	4	4	120
3	Natural Sciences	2	2	90
4	Medicine	1	1	14
5	Public Health	1	1	14

G. Radhakrishnan

Publications

309

Citations

H-Index

Page 1

	Year	Citations
A naphthalene derived Schiff base as a selective fluorescent probe for Fe2+ S. Santhoshkumar, K. Velmurugan, J. Prabhu, Inorganica Chimica Acta Inorganic ChemistrySchiff BasePhotochemistryBiochemistryNatural Sciences	2015	74
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy W. Priyantha, G. Radhakrishnan, Ravi Droopad, Journal of Crystal Growth Materials ScienceEngineeringCompound SemiconductorApplied PhysicsGallium Oxide	2010	48
An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS R. Oxland, S. W. Chang, Xu Li, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringSpecific ResistancePhysics	2012	40
RETRACTED: Applications of internet of things (IOT) to improve the stability of a grid connected power system using interline power flow controller G. Radhakrishnan, V. Gopalakrishnan Microprocessors and Microsystems Electrical EngineeringEngineeringPower Grid OperationSmart GridEnergy Management	2020	25
Swelling Properties of Expansive Soils Treated with Chemicals and Flyash G. Radhakrishnan, M. Anjan Kumar, Gvr Prasada Raju Geotechnical EngineeringHighway PavementPavement EngineeringCementationEngineering	2014	21
Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates A. Nouhi, G. Radhakrishnan, J. Katz, Applied Physics Letters Materials ScienceIi-vi SemiconductorElectrical EngineeringGaas/si SubstratesEngineering	1988	17
Laboratory Evaluation of the Effects of 3-Chloride Compounds on the Geotechnical Properties of an Expansive Subgrade Soil G. Radhakrishnan, M. Anjan Kumar, G. V. R. Prasada Raju Journal of The Institution of Engineers (India) Series A Geotechnical EngineeringEngineeringGeotechnical Property3-Chloride CompoundsCivil Engineering	2017	17
Reply to the ‘‘Comment on: ‘Nascent product excitations in unimolecular reactions: The separate statistical ensembles method’ ’’ C. Wittig, I. Nadler, H. Reisler, The Journal of Chemical Physics ‘ ‘ CommentEngineeringNatural SciencesUnimolecular ReactionsPhysical Chemistry	1986	16
Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy Shuji Nakamura, Shiro Sakai, Shi Chang, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationMolecular Beam Epitaxy	1989	15
Automatic Medicine Vending Machine B. Sabitha, K. Akila, G. Radhakrishnan, International Journal of Engineering and Advanced Technology Remote Patient MonitoringMedical TechnologyRfid ScannerPatient Tracking SystemRadio Frequency Identification	2019	14

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