We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs hetero-structure. Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, I _d,sat = 407 muA/mum; threshold voltage, V _t = +0.26 V; maximum extrinsic transconductance, g _m = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, I _g = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, R _on = 1920 Omega-mum; I _on /I _off ratio = 6.3 x 10 ⁴ ; and output conductance, g _d = 11 mS/mm. A peak electron mobility of 5230 cm ² /V. s was extracted from low-drain-bias measurements of 20 mum long-channel devices, which, to the authors' best knowledge, is the highest mobility extracted from any e-mode MOSFET. These transport and device data are highly encouraging for future high-performance n-channel complementary metal-oxide-semiconductor solutions based on III-V MOSFETs.

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