M. Radhakrishnan

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Chih Hang Tung, K. L. Pey, Lei Tang et al. · Applied Physics Letters · 2003 · 102 citations

Materials Engineering, Electrical Engineering, Semiconductor Device +14

Electrical conduction in coevaporated antimony trisulphide films

Jacob George, M. Radhakrishnan · Solid State Communications · 1980 · 100 citations

Materials Science, Electrical Conduction, Engineering +4

Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

Chee Lip Gan, Carl V. Thompson, K. L. Pey et al. · Applied Physics Letters · 2001 · 76 citations

Engineering, Severe Plastic Deformation, Cu Dual-damascene Metallization +23

Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Ching‐Hsuan Tung, K. L. Pey, Weiyuan Lin et al. · IEEE Electron Device Letters · 2002 · 70 citations

Materials Engineering, Electrical Engineering, Semiconductor Device +14

Microstructures and properties of Ti/TiC composites fabricated by laser-directed energy deposition

M. Radhakrishnan, BE Long, David Otazu et al. · Additive manufacturing · 2021 · 68 citations · Full text

Materials Science, Materials Engineering, Engineering +9