Weiyuan Lin

Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Ching‐Hsuan Tung, K. L. Pey, Weiyuan Lin et al. · IEEE Electron Device Letters · 2002 · 70 citations

Materials Engineering, Electrical Engineering, Semiconductor Device +14

Free transverse vibrations of uniform circular plates and membranes with eccentric holes

Weiyuan Lin · Journal of Sound and Vibration · 1982 · 39 citations

Eccentric Holes, Vibrations, Free Transverse Vibrations +13

Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern

K. L. Pey, Ching‐Hsuan Tung, M. Radhakrishnan et al. · 2003 · 34 citations

Materials Engineering, Sbd Dbie, Electrical Engineering +15

Gate dielectric degradation mechanism associated with DBIE evolution

K. L. Pey, Rakesh Ranjan, Ching‐Hsuan Tung et al. · 2004 · 31 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Size difference in dielectric-breakdown-induced epitaxy in narrow <i>n</i>- and <i>p</i>-metal oxide semiconductor field effect transistors

K. L. Pey, C. H. Tung, Lei Tang et al. · Applied Physics Letters · 2003 · 24 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14