Thomas Yang

Trap-Assisted DRAM Row Hammer Effect

Thomas Yang, Xi–Wei Lin · IEEE Electron Device Letters · 2019 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +15

High-speed, high-reliability GaN power device with integrated gate driver

Gaofei Tang, M.-H. Kwan, Zhaofu Zhang et al. · 2018 · 80 citations

Engineering, Electrical Engineering, Microelectronics +16

High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration

Gaofei Tang, M.-H. Kwan, Risheng Su et al. · IEEE Electron Device Letters · 2018 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

TCAD modeling for reliability

Pirkko Pfäffli, Hiu Yung Wong, Xiaopeng Xu et al. · Microelectronics Reliability · 2018 · 10 citations

Engineering, Systems Engineering, Fault-tolerant Computing +7