Jiaxin Zheng

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Yang Lu, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Meng Zhang, Xiaohua Ma, Minhan Mi et al. · Applied Physics Letters · 2017 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12

Extraction method for parasitic capacitances and inductances of HEMT models

Hengshuang Zhang, Peijun Ma, Yang Lu et al. · Solid-State Electronics · 2016 · 15 citations

Device Modeling, Electrical Engineering, Engineering +6

A Scalable Active Compensatory Sub-Circuit for Accurate GaN HEMT Large Signal Models

Jiaxin Zheng, Yang Lu, Bochao Zhao et al. · IEEE Microwave and Wireless Components Letters · 2016 · 14 citations

Device Modeling, Electrical Engineering, Engineering +14

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

Mengyi Cao, Yang Lu, Jiaxing Wei et al. · Chinese Physics B · 2014 · 12 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11