Balakrishnan Krishnan

Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN

V. Adivarahan, Q. Fareed, Monirul Islam et al. · Japanese Journal of Applied Physics · 2007 · 39 citations

Aluminium Nitride, Electrical Engineering, Electronic Devices +14

Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress

Wen Yang, J.S. Yuan, Balakrishnan Krishnan et al. · IEEE Transactions on Device and Materials Reliability · 2019 · 38 citations

Device Modeling, Electrical Engineering, Engineering +12

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

Ko‐Tao Lee, C. Bayram, Daniel Piedra et al. · IEEE Electron Device Letters · 2017 · 28 citations

Wide-bandgap Semiconductor, Engineering, Device Integration +16

Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

Jie Su, E. Armour, Balakrishnan Krishnan et al. · Journal of materials research/Pratt's guide to venture capital sources · 2015 · 24 citations

Materials Engineering, Aluminium Nitride, Electrical Engineering +8

Low-Side GaN Power Device Dynamic R_on Characteristics Under Different Substrate Biases

Wen Yang, J.S. Yuan, Balakrishnan Krishnan et al. · 2019 · 12 citations

Dynamic On-resistance, Wide-bandgap Semiconductor, Electrical Engineering +12