E. Armour

Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

S. M. Ting, J. Ramer, D. I. Florescu et al. · Journal of Applied Physics · 2003 · 98 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +18

Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD

Ping Zhou, Julian Cheng, C.F. Schaus et al. · IEEE Photonics Technology Letters · 1991 · 91 citations

Semiconductor Technology, Mirror Composition, Electrical Engineering +14

Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

D. I. Florescu, S. M. Ting, J. Ramer et al. · Applied Physics Letters · 2003 · 89 citations · Full text

Materials Science, Semiconductors, Embedded Inclusions +15

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

L. Kadinski, V. Merai, A. Parekh et al. · Journal of Crystal Growth · 2003 · 58 citations

Electrical Engineering, Gan/ingan Deposition, Engineering +6

InGaP/InGaAsN/GaAs <i>NpN</i> double-heterojunction bipolar transistor

P.C. Chang, Albert G. Baca, N. Y. Li et al. · Applied Physics Letters · 2000 · 55 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11