P.C. Chang

InGaP/InGaAsN/GaAs <i>NpN</i> double-heterojunction bipolar transistor

P.C. Chang, Albert G. Baca, N. Y. Li et al. · Applied Physics Letters · 2000 · 55 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Epitaxially-grown GaN junction field effect transistors

L. Zhang, L. F. Lester, Albert G. Baca et al. · IEEE Transactions on Electron Devices · 2000 · 43 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

P.C. Chang, Albert G. Baca, N. Y. Li et al. · Applied Physics Letters · 2000 · 41 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

DC characteristics of MOVPE-grown N <i>pn</i> InGaP/InGaAsN DHBTs

N.Y. Li, P.C. Chang, Albert G. Baca et al. · Electronics Letters · 2000 · 36 citations

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

C. Monier, S. J. Pearton, P.C. Chang et al. · Applied Physics Letters · 2000 · 19 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10