Concepedia

Author

P.C. Chang

Sandia National Laboratories

Also Known As

Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F., P. C. Chang, P. Chang, P.C Chang, P.C. Chang, Pablo C. Chang, Pablo Chang

33

Publications

303

Citations

9

H-Index

13

Concepts

All Affiliations

Sandia National LaboratoriesEmcore (United States)University of FloridaSandia National Laboratories California
PC

About

P.C. Chang is an author at Sandia National Laboratories specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

5

5

174

2

Applied Physics

5

5

174

3

Electrical Engineering

5

5

174

4

Electronic Devices

2

2

96

5

Physics

1

1

19

P.C. Chang

×

7

Publications

226

Citations

7

H-Index

YearCitations

InGaP/InGaAsN/GaAs <i>NpN</i> double-heterojunction bipolar transistor

P.C. Chang, Albert G. Baca, N. Y. Li,

Applied Physics Letters

2000

55

Epitaxially-grown GaN junction field effect transistors

L. Zhang, L. F. Lester, Albert G. Baca,

IEEE Transactions on Electron Devices

2000

43

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

P.C. Chang, Albert G. Baca, N. Y. Li,

Applied Physics Letters

2000

41

DC characteristics of MOVPE-grown N <i>pn</i> InGaP/InGaAsN DHBTs

N.Y. Li, P.C. Chang, Albert G. Baca,

Electronics Letters

2000

36

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

C. Monier, S. J. Pearton, P.C. Chang,

Applied Physics Letters

2000

19

<i>Pnp</i> InGaAsN-based HBT with graded basedoping

C. Monier, Albert G. Baca, P.C. Chang,

Electronics Letters

2001

16

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

P.C. Chang, N.Y. Li, Albert G. Baca,

IEEE Electron Device Letters

2001

16

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