Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD

Abstract

GaAs/AlGaAs vertical-cavity top-surface-emitting lasers (VCSELs) with a continuously graded mirror composition have been grown by MOCVD, and planar devices with proton-implant current confinement have been characterized. Continuous grading of the heterointerfaces in the Bragg reflectors eliminated the energy-band discontinuities, thus improving carrier transport and resulting in a substantial reduction in the series resistance and threshold voltage of the laser diodes. These VCSELs have excellent room-temperature CW electrical characteristics, including some of the lowest series resistances, highest power efficiencies and lowest operating voltages ever reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>